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Abstract
Time-dependent numerical simulations have been performed to investigate avalanche breakdown and surface deep-level trapping effects in GaAs MESFETs. The model is based on a combination of bipolar drift-diffusion transport, impact ionization, and a dynamic surface charging mechanism. A realistic trapping process is introduced into the surface trap model from which the spatial distribution of surface charge density is determined. The basic breakdown mechanisms, gate-bias-dependent breakdown voltages, and effects of surface charges are demonstrated. It is shown that the surface deep-level traps have a pronounced effect on the breakdown phenomenon.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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