Abstract
An “intelligent” digital growth control approach developed at Arizona State University (ASU) which combines deterministic and heuristic techniques allows virtually total automation of the high-pressure LEC process for GaAs growth. A number of 4 kg, 3 inch semi-insulating GaAs crystals have been grown reproducibly on an adapted Cambridge Instruments CI 358 puller without any significant operator intervention, with process yields of more than 75% single crystals. Crystals produced with the digital system were superior in diameter control, compared to conventionally grown crystals, and exhibited a better uniformity of their electrical and crystalline properties.
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