Abstract
The SOI structure is excellent for electric isolation between devices and it can markedly improve noise-immunity and thermo- tolerance, which are demanded for automotive semiconductor devices. It makes possible to integrate various functions and also it makes possible to integrate the multi-voltage devices, which operate under the different common-voltage conditions. Moreover, in the field of MEMS, unique sensors can be realized by using the SOI features such as stop-etching. In this paper, several devices are introduced, that we have developed using unique features of SOI.
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