Automatic Classification of C-SAM Voids for Root Cause Identification of Bonding Yield Degradation

Abstract

Wafer-level direct bonding technology is a key process for the production of backside illuminated (BSI) CMOS image sensor (CIS). Usually, constant-depth mode scanning acoustic microscope (C-SAM) 300mm wafer images are acquired and defect size distribution is provided to monitor defects that degrade bonding yield. This acquisition technique is used as it is nondestructive and is able to capture the full wafer. Current solutions are not providing information detailed enough to identify the root cause of this degradation. A consequence is that most measurements and classification is currently done manually which take time and have reproducibility issues. In this paper, we propose a rule-based method for the classification of the defects and automatic segmentation of the defects to extract precise measurements depending on the type of defect. The classes of defects are precisely defined based on their origin in the process. All these information will allow to reduce the time to analyze the images and improve the precision and consistency of the analysis. These results will allow to identify more precisely the defects thus the causes of yield degradation during bonding process.