Abstract
A hollow cathode plasma source has been operated automatically, demonstrating independent control of plasma ion energy and ion current density for plasma ion-assisted electron beam-deposited titania (TiO2). The lanthanum hexaboride hollow cathode design described in this work utilizes both the interior and exterior cathode surfaces, with the additional electrons generated removing the need for a separate neutralizing source. Automatic feedback control of plasma source cathode-to-anode accelerator voltage (AV—via argon gas flow to the anode and/or cathode plasma source areas) and accelerator current (AC—via an external high-current power supply) provides independent control of the ion energy distribution function and ion current density, respectively. Automated run-to-run reproducibility (over six separate deposition runs) in TiO2 refractive index (550 nm) was demonstrated as 2.416 ± 0.008 (spread quoted as one standard deviation), which is well within the required refractive index control for optical coating applications. Variation in refractive index is achievable through control of AV (ion energy) and/or AC (ion current density), directly influencing deposited TiO2 structural phase. Measured dependencies of TiO2 refractive index and extinction coefficient on AV and AC are described. Optimum plasma source parameters for assisted electron beam deposition of TiO2 optical thin-film applications are highlighted.
Highlights
In plasma ion beam-assisted deposition, the arrival of low-energy evaporation from electron beam evaporators is complemented by high-energy plasma ions, typically in the ion energy range from 1 to 100 eV at ion current densities between 1 and 1000 μA/cm2 [1]
The plasma source configuration and associated automated control provide a means of independent control of plasma ion energy and and associated automated control provide a means of independent control of plasma ion energy and current density
Experimental work shows that when the plasma source AC and accelerating voltage (AV)
Summary
In plasma ion beam-assisted deposition, the arrival of low-energy evaporation from electron beam evaporators is complemented by high-energy plasma ions, typically in the ion energy range from 1 to 100 eV at ion current densities between 1 and 1000 μA/cm2 [1]. Broad-beam ion [8][9], and plasma [9], leading toofrecent developments of commercial ion or and plasma sources leading tosources recent developments commercial ion or plasma beam systems plasma beamand systems for large-area and flatcompanies substrates [10]. All of these for large-area flat substrates by different. Emphasize the metrics emphasize the interdependence on the film temperature, ion current density and the ion interdependence on the film temperature, ion current density and the ion energy
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