Abstract
To identify the microstructure of EL2, the time evolution of EL2 thermal recovery has been investigated in detail by a piezoelectric photothermal method. With decreasing temperature, the time evolution changed from a simple saturating behavior to a sigmoid-function-like one, which were both quantitatively analyzed with an autocatalytic-reaction rate equation. The latter recovery mode suggests correlation between defects, for which recovery promotion via charge transfers from recovered to unrecovered EL2 defects can be considered. Based on the results, a three-center-complex model (V As–As Ga–Ga As) is proposed for the microstructure of EL2.
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