Abstract
The beam quality of 800 nm AlGaAs/GaAsP broad-area (BA) laser diodes with large optical cavity (LOC) waveguide structures was studied under high power conditions. The LOC structures consist of a tensile-strained GaAsP single quantum well embedded in AlGaAs layers forming 1 and 2μm thick waveguide cores. A low beam divergence of 51° respectively 46° (full width at 1/e2 maximum) is obtained in fast axis direction. BA diode lasers with 2 mm cavity length and stripe widths of 60, 100 and 200 μm show beam quality factors M2 along the slow axis of about 12, 16 and 35 at 2 W output power, respectively. M2 also weakly depends upon the waveguide width and is slightly smaller for the 2 μm waveguide core if the stripe width is less than 100μm.
Published Version
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