Abstract
We investigated the effect of an Al2O3 interfacial layer grown by atomic layer deposition on the electrical properties of Au Schottky contacts to n-type InP. Considering barrier inhomogeneity, modified Richardson plots yielded a Richardson constant of 8.4 and 7.5 Acm−2K−2, respectively, for the sample with and without the Al2O3 interlayer (theoretical value of 9.4 Acm−2K−2 for n-type InP). The dominant reverse current flow for the sample with an Al2O3 interlayer was found to be Poole–Frenkel emission. From capacitance–voltage measurements, it was observed that the capacitance for the sample without the Al2O3 interlayer was frequency dependent. Sputter-induced defects as well as structural defects were passivated effectively with an Al2O3 interlayer.
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