Abstract
We report on studies of the transport and incorporation of chlorine in during the oxidation of silicon in mixtures at 1000° and 1100°C using Auger sputter profiling (ASP) and secondary ion mass spectrometry (SIMS). The experimental results obtained were analyzed using general particle‐transport considerations including both diffusion and drift components. Data obtained from the SIMS profiles of the chlorine concentration in indicate that chlorine transport is aided by an electrochemical field in the oxide, although this field is undoubtedly not electrical in nature. Data obtained from the ASP profiles show that the interface acts as a sink for chlorine. By fitting the transport relations to the data obtained, an accurate model for chlorine transport is derived.
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