Abstract
The utility of polysynthetically-twinned (PST) TiAl, which contains a high density of parallel, atomically-flat interfaces within a set of identical crystallographic orientations, as a potential model system for a detailed investigation of interface diffusion is explored. Macroscopic PST crystals were grown in an optical float zone fumace. Thin films were cut from oriented crystals and polished with and directions normal to the film. After sputter cleaning, Ag was deposited on one side of the TiAl thin films. Auger spectra were obtained from these films over a wide range of sputter/anneal conditions. The Al and Ti concentrations were analyzed as well as the important impurity elements, S, Ar, C, N and O. Ag diffusion on the interfaces was confirmed. Using the present data and existing knowledge of the microstructure and crystallography of PST TiAl, the potential of this material for providing a detailed understanding of the atomistic mechanisms of interface diffusion is analyzed.
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