Abstract
The formation of Pd2Si in Pd films sputter deposited on Si substrates and heated up to 400 °C has been studied by measuring the depth profile using Auger electron spectroscopy (AES) and Ar+ ion sputtering. Significant chemical effects in the silicon LVV Auger peak shape have been observed, enabling the easy differentiation of the silicide from elemental silicon. The depth profile indicated that the silicide phase is formed at the Pd/Si interface even in the unannealed films. In forming the silicide, the silicon atoms diffuse through the film and on arrival at the surface oxidize to form a thin layer of SiO2. Some of the problems encountered in the determination of the depth scale from the AES data are pointed out.
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