Abstract

A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage V OC in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of V OC in silicon solar cells and the common-emitter current gain in bipolar transistors.

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