Abstract
A two-region analysis is presented to predict the common-emitter current gain of a bipolar transistor with the polysilicon contact to the emitter for a case when the recombinations at the mono-poly interface are not negligible. The calculated current-gain enhancement for typical device parameters and for different values of interface recombination velocity show that the current-gain enhancement and its increase with decrease of emitter width is smaller for the interface with larger recombinations.
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