Abstract
Double donors are deep impurities which are favourable for Auger recombination. The cross section of this recombination process and its temperature dependence are calculated for double donors in indirect-band-gap semiconductors (for instance S, Se and Te in Si). Because of the uncertainty of the impurity wavefunction, the cross section covers a wide range (10-14-10-19 cm2). The temperature dependence is only in agreement with experiments if the influence of lattice relaxation is taken into account. A remarkable point is the independence of this process with respect to the carrier density which is also observed in other cases. The analogous problem of a double acceptor (Zn in Si) is discussed.
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