Abstract
For Si and Ge nanocrystals (NCs) embedded in wide band-gap matrices, the Auger recombination and carrier multiplication (CM) lifetimes are computed exactly in a three-dimensional real space grid using empirical pseudopotential wave functions. Our results in support of recent experimental data offer other predictions. We extract simple Auger constants valid for NCs. We show that both Si and Ge NCs can benefit from photovoltaic efficiency improvement via CM due to the fact that under an optical excitation exceeding twice the band-gap energy, the electrons gain lion's share from the total excess energy and can cause a CM. We predict that CM becomes especially efficient for hot electrons with an excess energy of about $1\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ above the CM threshold.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.