Auger generation suppression in narrow-gap semiconductors using the magnetoconcentration effect

Abstract

A method is presented for the Auger generation suppression in narrow-gap semiconductors using the magnetoconcentration effect for the case when all the generation-recombination mechanisms (Auger, radiative, and Shockley–Read) are taken into account. A numerical solution is given for the kinetic equation determining carrier concentration distribution in a thin semiconductor slab placed in an electric and a magnetic field. The results of the numerical calculation show that the Auger generation suppression becomes very efficient when the concentration of Shockley–Read recombination centers is small enough.