Abstract
The dependence of the peak energy of the Auger band on the doping in n-type and p-type degenerate GaSb crystals is investigated, in good agreement with experiments. It is suggested that the continuum for n-type GaSb is only by a factor of 20 stronger than for p-type material, and the maximum value of the stimulated Auger emission in the n-type or p-type GaSb photoluminescence is 4 times weaker than the corresponding maximum value of the near-band-edge emission.
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