Abstract
Electronic properties of cleaved (110) surfaces of n- and p-type GaSb were investigated by means of photoemission measurements. Cleavage results in inhomogeneous band bending and work function but well-defined ionization energy. The inhomogeneities disappear after two days at room temperature. Modulation of photoemission by additional, non-emitting light is interpreted in terms of an escape depth surface, p-type crystals present flat bands at the surface; n-type GaSb has an inversion layer with a surface potential ( E F − E v) s = 0.09 eV. The ionization energy is ξ, = 4.94 ± 0.05 eV at room temperature. A lower limit for the density of surface states is D s $ ̆ = 2.2 × 10 13 cm −2 eV −2 near the top of the valence band. Adsorption of up to a monolayer of cesium does not result in any appreciable change in band bending: the cesiated surface of n-type material holds a negative charge.
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