Auger electron spectroscopy and electron energy loss spectroscopy studies on carbonization of Si(100) and (111) surfaces with ethylene

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The reactions of Si(100) and Si(111) surfaces at 700 °C (973 K) with ethylene (C 2H 4) at a pressure of 1.3×10 −4 Pa for various periods of time were studied by using Auger electron spectroscopy (AES) and electron energy loss spectroscopy (ELS). For a C 2H 4 exposure level, the amount of C on the (111) surface was larger than that on the (100) surface. The formation of β-SiC grain was deduced by comparing the C KLL spectra from the sample subjected to various C 2H 4 exposure levels, and from β-SiC crystal.