Abstract
We report on a theoretical and experimental study of acceptor bound exciton recombination. We present calculations of phononless Auger and radiative recombination in direct and indirect band gap materials. We consider hydrogenic acceptors in the direct band gap material Hg1−xCdxTe in which the band gap can be varied by changing alloy composition. We present calculations of the Auger transition rate and no-phonon oscillator strengths for the common acceptors in Si and Ge. We have measured the bound exciton lifetimes and no-phonon oscillator strengths for the acceptors in Si and find reasonable agreement with the calculated values.
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