Abstract
Multi-layer ohmic contact systems such as Au/Pt/Ti/Pt onIII-V double layers such as n-InGaP/p+-GaAs are of considerabletechnological relevance, e.g. for heterojunction bipolartransistors. The paper shows that such contacts can beeffectively reacted through the InGaP layer and exhibit verygood contact resistances (0.1 Ω mm) to the base layer ifthe thickness of the first Pt layer is properly matched to thethickness of the contacted InGaP layer. Interdiffusion andphase formation associated with the annealing processes arestudied by cross-sectional analytical transmission electron microscopy,thin-film x-ray diffraction and Auger electron spectroscopy depthprofiling. Thermal ageing experiments up to 400 °Cshow good electrical stability. Device related reliabilitytests do not show any degradation effect related to this novelbase contact.
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