Abstract
Abstract An easy to fabricate ohmic-contact to moderately-doped p-type GaAs has been achieved. The tri-layer Au/Ni/Au contact is deposited by thermal evaporation, followed by rapid thermal annealing in nitrogen atmosphere. A series of annealing times and temperatures are explored to determine the influence of annealing conditions on the low-resistance ohmic contacts. The resulting contacts show more than three orders of magnitude reduction in contact resistance compared to alternative Ti/Au depositions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
