Abstract
Au-induced lateral crystallization of amorphous Si 1− x Ge x ( x: 0–1) on SiO 2 at a low temperature (400 °C) has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 μm/h was obtained for all Ge fractions. As a result, poly-Si 1− x Ge x with large areas (> 20 μm) was obtained at a low temperature (400 °C). This is a great advantage of Au-induced lateral crystallization compared with Ni. However, the concentrations in the surface regions (depth: 0–20 nm) of the lateral growth regions were high (10–30%), though those in the deeper regions (depth: 20–50 nm) were as small as 1–2%. Removing of the surface regions with the high Au concentrations and gettering of Au atoms in the deeper regions are necessary to apply the grown layers to the device fabrication.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
