Attempts of Homo p-n Junction Formation in ZnS by Impurity Co-Doping with Vapor Phase Epitaxy

Abstract

ZnS p-n homo junctions have been obtained for the first time with epitaxially grown layers having the structures of n-ZnS:In/p-ZnS:In, Ag, N/p-GaAs and p-ZnS:In, Ag, N/n-ZnS:In/n-GaAs. Both of these structures showed rectifying behavior which is expected for p-n junctions. The forward voltage of 3.7 V where current increases rapidly corresponds to the band gap energy of ZnS at room temperature. For reverse bias, some samples having p-ZnS:In, Ag, N/n-ZnS:In/n-GaAs structure showed backward diode type character.