Atomistic Study of Transport Characteristics in Sub-1nm Ultra-narrow Molybdenum Disulfide (MoS2) Nanoribbon Field Effect Transistors

Abstract

In this work, nanoribbon field-effect-transistors (FETs) with an ultra-narrow monolayer MoS 2 channel are investigated to understand the transverse scaling limitations of MoS 2 FETs. It is observed that the bandgap of monolayer nanoribbon MoS 2 can be largely affected by the passivation atoms, wherein OH passivation is more effective than H passivation. Then, impacts of passivation atoms on transport characteristics in MoS 2 FETs with ultra-narrow MoS 2 channel are calculated. Though higher I on and lower I off can be obtained even in narrow MoS 2 FETs with O/H passivation, I off is hard to be suppressed due to the contribution of edge states. Our results indicate that edge states engineering could be one key point to integrate MoS 2 devices into CMOS technology.