Atomistic scale nanoscratching behavior of monocrystalline Cu influenced by water film in CMP process

Abstract

The effect of water film on the nanoscratching behavior of monocrystalline Cu was studied by molecular dynamics (MD) simulation. The results indicate that the friction force acting on abrasive particle increases due to the resistance of water film accumulating ahead of particle, but the water film with lubrication decreases friction force acting on Cu surface. The accumulation of water molecules around particle causes the anisotropy of ridge and the surface damage around the groove, and the water molecules remaining in the groove lead to the non-regular groove structure. The dislocation evolution displays the re-organization of the dislocation network in the nanoscratching process. The evaluation of removal efficiency shows the number of removed Cu atoms decreases with water film thickness. It is considered that an appropriate rather than a high removal efficiency should be adopted to evaluate the polishing process in real (chemical mechanical polishing) CMP. These results are helpful to reveal the polishing mechanism under the effect of water film from physical perspective, which benefits the development of ultra-precision manufacture and miniaturized components, as well as the innovation of CMP technology.