Abstract
The helium (He) bubble network formation process in bulk copper (Cu) is investigated using atomistic simulations. Self-interstitial atoms (SIAs) emitted by trap mutation during the growth process of a single He bubble change surrounding lattices and stress fields and affect the transport of nearby He atoms. Interstitial He atoms or dimers can become trapped by deformed lattices and become nucleation sites for new He bubbles. The interaction of He with SIAs mutually hinders their movements. Finally, a distributed network of He bubbles, which are mostly formed along stacking fault edges, is generated. System temperature and He insertion rate have significant influences on this network.
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