Atomic-scale study of dislocation–stacking fault tetrahedron interactions. Part I: mechanisms

Abstract

Stacking fault tetrahedra (SFTs) are formed under irradiation in fcc metals and alloys. The high number density of SFTs observed suggests that they should contribute to radiation-induced hardening and, therefore, be taken into account when estimating mechanical property changes of irradiated materials. The key issue in this is to describe the interaction between a moving dislocation and an individual SFT, which is distinguished by a small physical size of the order of ∼1–10 nm. We have performed atomistic simulations of edge and screw dislocations interacting with SFTs of different sizes at different temperatures and strain rates. Five possible interaction outcomes have been identified, involving either partial absorption, or shearing or restoration of SFTs. The mechanisms that give rise to these processes are described and their dependence on interaction parameters, such as SFT size, dislocation–SFT geometry, temperature and stress/strain rate are determined. Mechanisms that help to explain the formation of defect-free channels cleared by gliding dislocations, as observed experimentally, are also discussed. Hardening due to the various mechanisms and their dependence on loading conditions will be presented in a following paper (Part II).