Abstract
Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.
Highlights
Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics
We realize an lightemitting diode (LED) based on a single tunnelling junction made of vertically stacked Layered materials (LMs)
Three layers form a heterostructure on a silicon/silicon dioxide (Si/SiO2) substrate: a single layer of graphene (SLG), a thin (2–6 atomic layers) sheet of hexagonal boron nitride and a mono- or bi-layer of Transition metal dichalcogenides (TMDs), such as WSe2
Summary
Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices. The attractiveness of single-photon sources in LMs13–18 stems from their ability to operate at the fundamental limit of few-atom thickness, providing the potential to integrate into conventional and scalable high-speed optoelectronic systems[19,20]. Transition metal dichalcogenides (TMDs), being optically active layered semiconductors, are suitable for developing quantum-light generating devices. We further report all-electrical single-photon generation in the visible spectrum from a new class of quantum emitters in tungsten disulfide (WS2). Our results highlight the promise of LMs as a new platform for broadband hybrid all-integrated quantum-photonic circuits
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