Atomic vapour deposition (AVD) of SrBi 2Ta 2O 9 using an all alkoxide precursor

Abstract

A “single-source” Sr–Ta heterometal alkoxide precursor, Sr[Ta(OEt) 5(dmae)] 2 (dmae=OCH 2CH 2NMe 2), has been used for atomic vapour deposition (AVD) of SrBi 2Ta 2O 9 (SBT). This single-source precursor is designed to alleviate the mismatch between conventional Sr and Ta sources. Strontium tantalate thin films were deposited on silicon using the Sr[Ta(OEt) 5(dmae)] 2, and the optimum temperatures for deposition of strontium tantalate with a Sr:Ta ratio of 0.5 was found to be ∼510 °C. Deposition of Bi-oxide films using Bi(mmp) 3 (mmp=OCMe 2CH 2OMe) indicates similar decomposition behaviour to the Sr–Ta alkoxide precursor, demonstrating its suitability as a complementary source of Bi for SBT. The co-incorporation of Bi and Sr within the SBT films is promoted through the deposition of bismuth oxide/strontium tantalate super lattices. After post-growth annealing the super lattices are converted to strontium bismuth tantalate thin films.