Abstract
Sr 4Ta 2O 9 and HfO 2 films were prepared on 200 mm TiN/Si(100) substrates by Atomic Vapour Deposition (AVD). Depositions were carried out within a thermal budget of CMOS back end of line. Electrical properties have been investigated in metal-insulator-metal capacitors after sputter deposition of Au top electrodes. Both Sr 4Ta 2O 9 and HfO 2 dielectrics show excellent electrical performances. Oxides possess high capacitance densities of 3.5 fF/ μm 2(HfO 2) and 4.5 fF/ μm 2 (Sr 4Ta 2O 9) in combination with high voltage linearity ( α < 100ppm/V 2). Sr 4Ta 2O 9 MIM capacitors provide lower leakage currents at 2 V, while HfO 2 MIMs offer higher operating voltage values for 10 years lifetime than Sr 4Ta 2O 9 based capacitors. The dielectric breakdown fields of HfO 2 (5.8 MV/cm) and Sr 4Ta 2O 9 (3.2 MV/cm) were obtained from I(V) characteristics.
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