Atomic Transport in LaAlO[sub 3] Films on Si Induced by Thermal Annealing

Abstract

LaAlO 3 films sputter-deposited on Si were submitted to rapid thermal annealing at 800 and 1000°C. Atomic transport and chemical changes were investigated using ion beam analysis and X-ray photoelectron spectroscopy. Annealing induced La and Al losses or their migration into a newly formed interracial layer and Si migration into the film. The mechanism of Si incorporation into the film is influenced by the annealing atmosphere. These instabilities were hampered by a thermal nitridation in NH 3 at 700°C performed prior to rapid thermal annealing, indicating a possible route for producing a thermally stable La-based high-K gate dielectric.