Abstract
We have studied atomic structures of the steps on Si(001) surface, using scanning tunneling microscopy. Freezing of dimer buckling on an upper terrace near the SA steps is clearly observed, which also affects atomic arrangements near the step. Both types of the rebonded and the nonrebonded SB steps are observed. The scanning tunneling microscopy image of the rebonded SB step shows a characteristic feature in which two markedly bright spots are observed in the empty state. It is found that one bright protrusion corresponds to the dimer at the end of the upper terrace, and another corresponds to the rebonded atoms at the lower terrace. The feature might be related to the lattice strain and the charge transfer by the rebonding.
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More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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