Abstract
Buried GaAs depositions in a GaSb(001) matrix with a few monolayers (ML) thickness form nanometer size tensile-strained agglomerations. Cross-sectional scanning tunneling microscopy reveals in case of 1 ML and 2 ML GaAs lateral sizes of about 5–6 nm and heights of about 6–8 ML, while in the case of 3 ML and 4 ML GaAs deposition the lateral sizes increase to 9–11 nm and the heights to about 8–11 ML. The stoichiometry of the nanostructures is intermixed with the GaSb matrix material, particularly for low amounts of deposited GaAs. This investigation exhibits defect free growth of GaAs/GaSb(001) and demonstrates promising perspectives for future developments in the Ga(In)As/GaSb(001) system.
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