Abstract
The determination of the atomic core of dislocations in semiconductors is a challenging problem for high-resolution electron microscopy(HREM). In previous studies, various defects in elemental semiconductors, III-V and II-VI compound semiconductors have been reported. In particular, the core structure of the 30° partial dislocations in silicon, which are dissociated from a perfect 60° dislocation, have been deduced. present study, various CdTe dislocations have been imaged at 400keV. and their core structures have been analyzed with assistance from multi-slice image simulations. Sections of CdTe single crystal were cut normal to the [110] direction, followed by mechanically polishing to a thickness of ˜ 20 microns and finally argon ion-beam milling to perforation for electron microscopy. The crystals were examined with a JEM-4000EX. having a structure resolution limit of ˜ 1.7Å at 400keV.
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