Atomic structure analysis of stacking faults and misfit dislocations at 3C-SiC/Si(0 0 1) interfaces by aberration-corrected transmission electron microscopy

Abstract

The interfacial atomic structures of 3C-SiC/Si(0 0 1) and the dislocation core structures related to generation and annihilation of stacking faults are clarified by aberration-corrected transmission electron microscopy combined with image processing called the ‘image subtraction and improved deconvolution (ISD)’ method. Details of the intrinsic interfacial structure are explained in terms of a two-dimensional network of partial edge dislocations and Lomer dislocations. Around the junction of the interface and a {1 1 1} stacking fault, a seven-membered ring of Si and C atom columns and interfacial steps are observed. On the other hand, a six-membered ring is observed at the intersection of two {1 1 1} stacking faults. Based on the results, the formation mechanism of the intrinsic interfacial structure and stacking faults during the growth process is discussed.