Abstract
Abstract The breakthrough of 4H-SiC MOSFETs is stemmed mainly due to the mobility degradation in their channel in spite of the good physical intrinsic material properties. Here, two different n -channel 4H-SiC MOSFETs are characterized in order to analyze the elemental composition at the SiC/SiO 2 interface and its relationship to their electrical properties. Elemental distribution analyses performed by EELS reveal the existence of a transition layer between the SiC and the SiO 2 regions of the same width for both MOSFETs despite a factor of nearly two between their electron mobility. Additional 3D compositional mapping by atom probe tomography corroborates these results, particularly the absence of an anomalous carbon distribution around the SiC/SiO 2 interface.
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