Abstract
The direct interpretability of atomic resolution Z-contrast images obtained from a scanning transmission electron microscope (STEM) makes this imaging technique particularly powerful for the analysis of interfaces and defects in semiconductor materials and devices. In this paper, the principles of the technique are outlined and representative examples of its use are presented. In particular, we show the use of Z-contrast imaging to determine the polarity of a CdTe film grown on a Si substrate, the atomic structures of stacking faults and threading dislocation cores in GaN, and the atomistic structure of an ohmic metal/semiconductor contact of Au/GaAs.
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