Abstract
The silicon concentration profile in Si–GaAs (001) superlattices grown by molecular beam epitaxy was investigated using scanning transmission electron microscopy high-angle annular dark-field (HAADF) imaging. Comparison with atomic resolution results obtained through cross-sectional scanning tunneling microscopy indicates that, by choosing appropriate experimental conditions, HAADF imaging can be used to gauge the Si distribution in GaAs on the atomic scale even without any image simulation.
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