Abstract
AbstractAfter a short retrospect on the development of the electron diffraction techniques it is shown that the atomic‐scale morphology of the crystal surface and growth processes on it can be studied in detail during molecular beam epitaxy (MBE) by reflection high‐energy electron diffraction (RHEED). This is demonstrated for the evolution of the terrace‐step‐structure of the singular GaAs (001) surface during growth and after growth interruption and for the attachment of Si atoms at misorientation steps on vicinal GaAs (001) surfaces.
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