Abstract
The atomic structure and atomic ordering of AlGaN/AlN/Si(111) thin films were studied using regular X-ray diffraction (XRD) and anomalous X-ray scattering (AXS). From regular XRD, both the Al composition and strain status of the AlGaN films are determined. AXS spectra were obtained near Ga K absorption edge at both the fundamental (0002) Bragg peak and non-vanishing forbidden (0001) peak. From this (0001) Bragg peak, long range atomic ordering with 2 bilayer periodicity is confirmed and the order parameter, S is determined from the integrated intensity ratio that is maximized up to 0.08 near x approximately equal to approximately equal to 0.5. The AXS near forbidden peak can be an effective method to reveal the atomic ordering of thin films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
