Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering

Abstract

We have determined the absolute indium content incorporated in the crystalline lattice of InGaN films and InGaN/GaN multiple quantum wells using anomalous x-ray scattering (AXS). AXS spectra were obtained near the In K absorption edge at the InGaN (0006) Bragg peak where the InGaN Bragg reflection is well-resolved from the GaN reflections. By comparing the indium composition obtained by AXS to regular x-ray scattering results, which are also sensitive to the lattice strain, we determine the Poisson ratio of InGaN to be ν≈0.23. The AXS method can be effective in determining absolute chemical composition of InGaN independent of the lattice strain, which is especially valuable for InGaN multiple quantum wells.