Abstract
Using reflectance-difference spectroscopy, we perform the first real-time spectroscopic investigation of the evolution of the (001) GaAs surface to cyclic and noncyclic exposures to atmospheric pressure H2, H2 and trimethylgallium, and H2 and AsH3 that simulate growth by atomic layer epitaxy. None of our observations are consistent with any previously proposed simple model. The results emphasize the necessity of real-time measurements for the analysis of complex surface reactions.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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