Atomic layer epitaxy controlled by surface superstructures in SiC

Abstract

Novel atomic layer epitaxy controlled by surface superstructures in SiC was demonstrated. An alternating supply of source gases of Si 2H 6 and C 2H 2 in gas source molecular beam epitaxy induced the transitions of the surface superstructures. When Si 2H 6 was supplied, Si atoms generated by thermal decomposition adsorbed on the substrate and constructed superstructures corresponding to the number of constituent Si atoms. When C 2H 2 was supplied, the adsorbed Si atoms reacted with the C 2H 2 molecules, resulting in crystallization. The growth rate seemed to be regulated by the limited number of Si atoms forming the superstructures. Single-crystalline 3C-SiC was homoepitaxially grown at a low substrate temperature of 1000 °C. Detailed analysis of dynamic reflected high energy electron diffraction observations revealed the proper configuration of the surface superstructures, and the possibility of single monolayer growth of 3C-SiC was presented.