Abstract
Lattice-matched epitaxial growth of 3C-SiC on 6H-SiC substrates using an alternate supply of disilane (Si2H6) and acetylene (C2H2) gas molecular beams in a high vacuum was carried out. On 6H-SiC(0001̄) substrates, epilayers of 3C-SiC(1̄1̄1̄) with a double-positioning twin structure were obtained. On the other hand, single crystalline 3C-SiC(001) epilayers without twin structure were obtained on 6H-SiC(01̄14̄) substrates even at low temperatures down to 850 °C.
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