Abstract
Atomic Layer Epitaxy growth of optoelectronic semiconductors ZnTe, CdTe and CdxZn1-x Te and CdSe films is achieved by using a novel isothermal closed space sublimation system. The quality of the films and the Atomic Layer Epitaxy regime was confirmed by X-Rays and electron diffraction, Transmission Electron Microscope observations and composition measurement of the ternary CdxZn1-x Te alloys. The difference in vapor pressures between the elemental source and the growing surface is the driven force for the growth; this difference being zeroed once the surface is completely. ZnTe growth is regulated at 1 ML/cycle while CdTe is regulated at 0.5 ML/cycle.
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