Abstract
We have used secondary ion mass spectrometry and cathodoluminescence spectroscopy to determine the effects that growth and postgrowth conditions have on interdiffusion and near band edge emissions in In0.53Ga0.47As/InP heterojunctions grown by molecular beam epitaxy. This lattice-matched interface represents a model system for the study of atomic movements and electronic changes with controlled anion overlap during growth. Structures subjected to anneals ranging from 440 to 495 °C provide a quantitative measure of concentration-driven cross diffusion of group-III and group-V atoms. By measuring anneal-induced broadening at the InGaAs-on-InP interface we have determined an activation energy for As diffusion into InP of ∼2.44±0.40 eV. An interface layer with Ga–P bonds indicates Ga competes favorably versus As for bonding in the preannealed InP near-surface region. In addition, we present evidence that interface chemical effects manifest themselves electronically as variations of the InGaAs band gap energy.
Published Version
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