Abstract
Low temperature atomic layer deposition (ALD) of monolayer to few layer MoS2 uniformly across 150 mm diameter SiO2/Si and quartz substrates is demonstrated. Purge separated cycles of MoCl5 and H2S precursors are used at reactor temperatures of up to 475 °C. Raman scattering studies show clearly the in-plane (E12g) and out-of-plane (A1g) modes of MoS2. The separation of the E12g and A1g peaks is a function of the number of ALD cycles, shifting closer together with fewer layers. X-ray photoelectron spectroscopy indicates that stoichiometry is improved by postdeposition annealing in a sulfur ambient. High resolution transmission electron microscopy confirms the atomic spacing of monolayer MoS2 thin films.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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