Abstract
Despite its potential for CMOS applications, atomic layer deposition (ALD) of GeO2 thin films, by itself or in combination with SiO2, has not been widely investigated yet. Here, we report the ALD growth of SiO2/GeO2 multilayers on si1icon substrates using a so far unexplored Ge precursor. The characterization of multilayers with various periodicities reveals layer-by-layer growth with electron density contrast and the absence of chemical intermixing, down to a periodicity of two atomic layers.
Highlights
One of the materials with the longest history using the atomic layer deposition (ALD) techniques is SiO2,11 a key element in the microelectronics industry with applications as a passivation layer and gate oxide, among others
Research on GeO2 films has been mainly devoted to the study of the GeO2/Ge interface, with GeO2 films being proposed as a means to reduce the concentration of interface states between Ge and a high-K dielectric on top,[15–17] with the goal of realizing MOSFETs with a Ge-based channel
Thin films consisting of SiO2 and GeO2 multilayers have been investigated in the past, from both solution and vapor deposition methods,[22–24] with the focus being mostly on their optical properties
Summary
One of the materials with the longest history using the ALD techniques is SiO2,11 a key element in the microelectronics industry with applications as a passivation layer and gate oxide, among others. We report the ALD growth of SiO2/GeO2 multilayers on si1icon substrates using a so far unexplored Ge precursor.
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