Abstract

An ALD (Atomic Layer Deposition) system is constructed. It has multi-channel shower head to deliver sequentially separated source pulses, and it also has a load-lock chamber to develop high vacuum in main chamber efficiently. In this system, Ru (Ruthenium) layers are deposited on 8-inch silicon wafer. A new Ru-precusor, Ru(CO)3(C4H6), is used as a Ru source. NH3 is used as a reactant, and Ar, a conventional purge gas, is used as a carrier gas. For each one cycle period, one second pulses of the source and the reactant with Ar are injected to the system separately, and Ar purge gas is injected for three second between the source and the reactant pulse. The mechanism and the process of Ru deposition by the new Ru- precursor are completely understood, and Ru is deposited successfully on the silicon wafer in our system. The physical properties and phase of the deposited Ru film are investigated by changing the physical variables including Ru flow rate. Our AES result of Ru thin film by using our new Ru precursor is shown in this paper. The oxygen impurity is barely detected. The proper control of the impurity is discussed. From our results, our ALD system with the new Ru-precursor is expected to be one of the future candidates for fabricating Ru electrode for capacitors below 50nm technology.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call